Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications

Anant Johari; Meng Che Tsai; Trinh Ngo Minh Thang; Yi Yang; Tian Li Wu; Ankur Gupta; Rajendra Singh

doi:10.1109/EDTM58488.2024.10512205

Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications

Anant Johari^*, Meng Che Tsai, Trinh Ngo Minh Thang, Yi Yang, Tian Li Wu^*, Ankur Gupta, Rajendra Singh

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this work, GaN-on-Si MIS-HEMT DC characterization results are presented from 4 K to 550 K, to observe the device's behavior for space applications. The enhancement in threshold voltage (V_ th ), transconductance (g_m), and ON resistance (R_ON, spec ) of the device are analyzed as a function of temperature. It is observed that there is no carrier freeze-out effect at 4 K, nor any self-heating effect at 550 K, making it a perfect device for use in quantum computing and space applications.

原文	English
主出版物標題	IEEE Electron Devices Technology and Manufacturing Conference
主出版物子標題	Strengthening the Globalization in Semiconductors, EDTM 2024
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9798350371529
DOIs	https://doi.org/10.1109/EDTM58488.2024.10512205
出版狀態	Published - 2024
事件	8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 - Bangalore, 印度持續時間: 3 3月 2024 → 6 3月 2024

出版系列

名字	IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

Conference

Conference	8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
國家/地區	印度
城市	Bangalore
期間	3/03/24 → 6/03/24

存取文件

10.1109/EDTM58488.2024.10512205

其它文件與鏈接

Link to publication in Scopus

引用此

Johari, A., Tsai, M. C., Thang, T. N. M., Yang, Y., Wu, T. L., Gupta, A., & Singh, R. (2024). Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications. 於 IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024 (IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM58488.2024.10512205

Johari, Anant ; Tsai, Meng Che ; Thang, Trinh Ngo Minh 等. / Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications. IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. Institute of Electrical and Electronics Engineers Inc., 2024. (IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024).

@inproceedings{efb65884b63e45bbb4b3bdcab0a8c84f,

title = "Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications",

abstract = "In this work, GaN-on-Si MIS-HEMT DC characterization results are presented from 4 K to 550 K, to observe the device's behavior for space applications. The enhancement in threshold voltage (V_ th ), transconductance (g_m), and ON resistance (R_ON, spec ) of the device are analyzed as a function of temperature. It is observed that there is no carrier freeze-out effect at 4 K, nor any self-heating effect at 550 K, making it a perfect device for use in quantum computing and space applications.",

keywords = "GaN-on-Si, MIS-HEMT, cryogenic temperature, quantum computing, space applications",

author = "Anant Johari and Tsai, {Meng Che} and Thang, {Trinh Ngo Minh} and Yi Yang and Wu, {Tian Li} and Ankur Gupta and Rajendra Singh",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 ; Conference date: 03-03-2024 Through 06-03-2024",

year = "2024",

doi = "10.1109/EDTM58488.2024.10512205",

language = "English",

series = "IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IEEE Electron Devices Technology and Manufacturing Conference",

address = "美國",

}

Johari, A, Tsai, MC, Thang, TNM, Yang, Y, Wu, TL, Gupta, A & Singh, R 2024, Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications. 於 IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024, Institute of Electrical and Electronics Engineers Inc., 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024, Bangalore, 印度, 3/03/24. https://doi.org/10.1109/EDTM58488.2024.10512205

Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications. / Johari, Anant; Tsai, Meng Che; Thang, Trinh Ngo Minh 等.
IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. Institute of Electrical and Electronics Engineers Inc., 2024. (IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications

AU - Johari, Anant

AU - Tsai, Meng Che

AU - Thang, Trinh Ngo Minh

AU - Yang, Yi

AU - Wu, Tian Li

AU - Gupta, Ankur

AU - Singh, Rajendra

PY - 2024

Y1 - 2024

N2 - In this work, GaN-on-Si MIS-HEMT DC characterization results are presented from 4 K to 550 K, to observe the device's behavior for space applications. The enhancement in threshold voltage (V_ th ), transconductance (g_m), and ON resistance (R_ON, spec ) of the device are analyzed as a function of temperature. It is observed that there is no carrier freeze-out effect at 4 K, nor any self-heating effect at 550 K, making it a perfect device for use in quantum computing and space applications.

AB - In this work, GaN-on-Si MIS-HEMT DC characterization results are presented from 4 K to 550 K, to observe the device's behavior for space applications. The enhancement in threshold voltage (V_ th ), transconductance (g_m), and ON resistance (R_ON, spec ) of the device are analyzed as a function of temperature. It is observed that there is no carrier freeze-out effect at 4 K, nor any self-heating effect at 550 K, making it a perfect device for use in quantum computing and space applications.

KW - GaN-on-Si

KW - MIS-HEMT

KW - cryogenic temperature

KW - quantum computing

KW - space applications

UR - http://www.scopus.com/inward/record.url?scp=85193226806&partnerID=8YFLogxK

U2 - 10.1109/EDTM58488.2024.10512205

DO - 10.1109/EDTM58488.2024.10512205

M3 - Conference contribution

AN - SCOPUS:85193226806

T3 - IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

BT - IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024

Y2 - 3 March 2024 through 6 March 2024

ER -

Johari A, Tsai MC, Thang TNM, Yang Y, Wu TL, Gupta A 等. Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications. 於 IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. Institute of Electrical and Electronics Engineers Inc. 2024. (IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024). doi: 10.1109/EDTM58488.2024.10512205

Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications

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