Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs

Dong Ru Hsieh; Yi De Chan; Po Yi Kuo; Tien-Sheng Chao

doi:10.1109/JEDS.2018.2803800

Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs

Dong Ru Hsieh, Yi De Chan, Po Yi Kuo, Tien-Sheng Chao^*

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

In this paper, the influence of channel doping concentration and reverse boron penetration on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) FETs has been experimentally investigated and discussed. Effective carrier concentration (N_eff) and threshold voltage (V_TH) are found to be sensitive to doping concentration. Moreover, the positive shift in V_TH and the degradation in the subthreshold behavior for PG JAM FETs are observed after an additional source/drain (S/D) activation process. Using a low thermal-budget S/D activation process, PG JAM FETs with a suitable channel doping concentration can show excellent electrical characteristics: 1) steep subthreshold swing of 86 mV/dec.; 2) low average subthreshold swing (A.S.S.) of 96 mV/dec.; and 3) high ON/OFF current ratio (I_ON/I_OFF) of 7.7 \times 10⁷ (I_ON at V_G - V_TH = -2 V and V_D = -1 V).

原文	English
頁（從 - 到）	314-319
頁數	6
期刊	IEEE Journal of the Electron Devices Society
卷	6
發行號	1
DOIs	https://doi.org/10.1109/JEDS.2018.2803800
出版狀態	Published - 7 2月 2018

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@article{75278c229244463e928ff26653b65253,

title = "Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs",

abstract = "In this paper, the influence of channel doping concentration and reverse boron penetration on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) FETs has been experimentally investigated and discussed. Effective carrier concentration (Neff) and threshold voltage (VTH) are found to be sensitive to doping concentration. Moreover, the positive shift in VTH and the degradation in the subthreshold behavior for PG JAM FETs are observed after an additional source/drain (S/D) activation process. Using a low thermal-budget S/D activation process, PG JAM FETs with a suitable channel doping concentration can show excellent electrical characteristics: 1) steep subthreshold swing of 86 mV/dec.; 2) low average subthreshold swing (A.S.S.) of 96 mV/dec.; and 3) high ON/OFF current ratio (ION/IOFF) of 7.7 \times 107 (ION at VG - VTH = -2 V and VD = -1 V).",

keywords = "3-D integrated circuits (ICs), Pi-gate (PG), channel doping concentration, junctionless accumulation mode (JAM), poly-Si, reverse boron penetration",

author = "Hsieh, {Dong Ru} and Chan, {Yi De} and Kuo, {Po Yi} and Tien-Sheng Chao",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2018",

month = feb,

day = "7",

doi = "10.1109/JEDS.2018.2803800",

language = "English",

volume = "6",

pages = "314--319",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs

AU - Hsieh, Dong Ru

AU - Chan, Yi De

AU - Kuo, Po Yi

AU - Chao, Tien-Sheng

PY - 2018/2/7

Y1 - 2018/2/7

N2 - In this paper, the influence of channel doping concentration and reverse boron penetration on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) FETs has been experimentally investigated and discussed. Effective carrier concentration (Neff) and threshold voltage (VTH) are found to be sensitive to doping concentration. Moreover, the positive shift in VTH and the degradation in the subthreshold behavior for PG JAM FETs are observed after an additional source/drain (S/D) activation process. Using a low thermal-budget S/D activation process, PG JAM FETs with a suitable channel doping concentration can show excellent electrical characteristics: 1) steep subthreshold swing of 86 mV/dec.; 2) low average subthreshold swing (A.S.S.) of 96 mV/dec.; and 3) high ON/OFF current ratio (ION/IOFF) of 7.7 \times 107 (ION at VG - VTH = -2 V and VD = -1 V).

AB - In this paper, the influence of channel doping concentration and reverse boron penetration on p-type Pi-gate (PG) poly-Si junctionless accumulation mode (JAM) FETs has been experimentally investigated and discussed. Effective carrier concentration (Neff) and threshold voltage (VTH) are found to be sensitive to doping concentration. Moreover, the positive shift in VTH and the degradation in the subthreshold behavior for PG JAM FETs are observed after an additional source/drain (S/D) activation process. Using a low thermal-budget S/D activation process, PG JAM FETs with a suitable channel doping concentration can show excellent electrical characteristics: 1) steep subthreshold swing of 86 mV/dec.; 2) low average subthreshold swing (A.S.S.) of 96 mV/dec.; and 3) high ON/OFF current ratio (ION/IOFF) of 7.7 \times 107 (ION at VG - VTH = -2 V and VD = -1 V).

KW - 3-D integrated circuits (ICs)

KW - Pi-gate (PG)

KW - channel doping concentration

KW - junctionless accumulation mode (JAM)

KW - poly-Si

KW - reverse boron penetration

UR - http://www.scopus.com/inward/record.url?scp=85041497682&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2018.2803800

DO - 10.1109/JEDS.2018.2803800

M3 - Article

AN - SCOPUS:85041497682

SN - 2168-6734

VL - 6

SP - 314

EP - 319

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

IS - 1

ER -

Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs

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