Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

Kuo Hsi Yen*, S. Nishizaki, K. Ohdaira, H. Matsumura, Y. T. Huang, Hsiao-Wen Zan, C. C. Tsai

*此作品的通信作者

研究成果: Conference article同行評審

摘要

In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (Tcat) regime. We studied the influence of high Tcat on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T cat, the distance between catalyzer and substrate (Dcs), and the deposition pressure (P).

原文English
頁(從 - 到)583-587
頁數5
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
7
發行號3-4
DOIs
出版狀態Published - 27 5月 2010
事件23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Netherlands
持續時間: 23 8月 200928 8月 2009

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