Investigation of backgate-bias dependence of threshold-voltage sensitivity to process and temperature variations for ultra-thin-body hetero-channel MOSFETs

This paper investigates the impact of backgate bias $({\rm V}-{\rm bg})$ on the sensitivity of threshold voltage $({\rm V}-{\rm th})$ to process and temperature variations for ultra-thin-body (UTB) GeOI and InGaAs-OI MOSFETs. Our study indicates that the quantum-confinement effect significantly suppresses the ${\rm V}_{\rm bg} dependence of the ${\rm V}_{\rm th} sensitivity to process and temperature variations. Since Si, Ge, and InGaAs channels exhibit different degrees of quantum confinement, the impact of quantum confinement has to be considered when one-to-one comparisons among hetero-channel UTB devices regarding variability are made. Our study is crucial to the robustness of multi- ${\rm V} _{\rm th} designs with advanced UTB technologies.