Investigation into gate-to-source capacitance induced by highly efficient band-to-band tunneling in p-channel Ge epitaxial tunnel layer tunnel FET

Pei Yu Wang, Bing-Yue Tsui

    研究成果: Article同行評審

    17 引文 斯高帕斯(Scopus)

    摘要

    The gate-to-source capacitance (CGS) in the p-channel tunnel FET (pTFET) with a Ge epitaxial tunnel layer (ETL) structure is investigated. The characteristic of CGS is revealed and studied with various frequencies and temperatures. Due to the highly efficient band-to-band tunneling (BTBT) in the Ge ETL pTFET, the minority carriers for the source can be generated by the BTBT process and can respond with the gate voltage. Therefore, the contribution of CGS to the total gate capacitance in the ON-state would increase, which results in a decrease of the gate-to-drain capacitance. This property is beneficial to the suppression of the Miller capacitance effect on the TFET-based circuit.

    原文English
    文章編號7429736
    頁(從 - 到)1788-1790
    頁數3
    期刊IEEE Transactions on Electron Devices
    63
    發行號4
    DOIs
    出版狀態Published - 1 4月 2016

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