Investigation and comparison of the gan-based light-emitting diodes grown on high aspect ratio nano-cone and general micro-cone patterned sapphire substrate

Jhih Kai Huang, Da Wei Lin, Min Hsiung Shih, Kang Yuan Lee, Jyun Rong Chen, Hung Weng Huang, Shou Yi Kuo, Chung Hsiang Lin, Po-Tsung Lee, Gou Chung Chi, Hao-Chung Kuo

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

In this paper, we demonstrated the high performance GaN-based LEDs by using a high aspect ratio cone-shape nano-patterned sapphire substrate (HAR-NPSS). We utilized nano-imprint lithography (NIL) and dry-etching system to fabricate a high depth HAR-NPSS. The micro-scale patterned sapphire substrate (PSS) was also used for comparison. A great enhancement of light output was observed when GaN-based LEDs were grown on a HAR-NPSS or a PSS. The light output power of LEDs with a HAR-NPSS and LEDs with a PSS were enhanced of 49 and 38% compared to LEDs with a unpatterned sapphire substrate. The high output power of the LED with a HAR-NPSS indicated that the technology of NAR-NPSS not only can improve the crystalline quality of GaN-based LEDs but also a promising development to a NPSS.

原文English
文章編號6547174
頁(從 - 到)947-952
頁數6
期刊IEEE/OSA Journal of Display Technology
9
發行號12
DOIs
出版狀態Published - 12月 2013

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