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Investigation and application of vertical NPN devices for RF ESD protection in BiCMOS technology
Guo Lun Huang, Wei Hao Fu,
Chun Yu Lin
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Keyphrases
BiCMOS Technology
100%
Radio Frequency
100%
Electrostatic Discharge (ESD) Protection
100%
Electrostatic Discharge
100%
Integrated Circuits
33%
System Level
33%
Radio-frequency Integrated Circuit (RF IC)
33%
Low Noise Amplifier
33%
Low Power Consumption
16%
High Drive
16%
Discharge Events
16%
Simulation Study
16%
Resistors
16%
Low Noise
16%
Reliability Issues
16%
Silicon-germanium
16%
I-V Characteristics
16%
Human Body Model
16%
Transmission Line Pulsing
16%
Radio Frequency Characteristics
16%
Component Level
16%
Protection Device
16%
Model Robustness
16%
Gun Test
16%
Engineering
Radio Frequency
100%
Electrostatic Discharge
100%
Integrated Circuit
44%
Low Noise Amplifier
22%
Low Power Consumption
11%
Electric Lines
11%
Simulators
11%
Human Body Model
11%
Reliability Issue
11%
Protection Device
11%
Frequency Characteristic
11%
Component Level
11%