Inversion-mode InGaAs FinFETs for RF applications

Jing Yuan Wu*, Ping Huang, Quang Ho Luc, Yung Chun Chiang, Hsiang Chan Yu, Mu Yu Chen, Edward Yi Chang

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, we present an inversion-mode InGaAs FinFETs with transition frequency (f T) = 263 GHz and maximum oscillation frequency (f max) = 70 GHz. In addition, peak transconductance (g m) = 1976 (μS μm−1) and drain-induced barrier lowering (DIBL) = 88 (mV V−1) were also measured at V ds = 0.5 V; subthreshold swing (SS) = 77 and 83 (mV dec−1) was obtained at V ds = 0.05 and 0.5 V, respectively. Immunity to short-channel effects and superior transfer characteristics are attributed to the gate controllability of the fin structure. This work demonstrates the capability of inversion-mode InGaAs FinFETs in the realm of high-frequency applications.

原文English
文章編號091004
期刊Applied Physics Express
16
發行號9
DOIs
出版狀態Published - 1 9月 2023

指紋

深入研究「Inversion-mode InGaAs FinFETs for RF applications」主題。共同形成了獨特的指紋。

引用此