Inversion-Mode InGaAs FinFETs for Logic and RF Applications

Jing Yuan Wu*, Mu Yu Chen, Edward Yi Chang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We present the DC and RF characterization of inversion-mode In0.53Ga0.47As FinFETs. Tri-gate fin devices on InP substrates have demonstrated a maximum gm=2.05 mS/μm and fT/fmax=270/80 GHz at Vds=0.5 V, and drain induced barrier lowering (DIBL) of 110 (mV/V) was also exhibited. Moreover, a subthreshold swing (SS) of 81 and 92 (mV/dec) was obtained at Vds = 0.05 and 0.5 V, respectively. With the assistance of delay-time analysis, the effective electron velocity is also reported.

原文English
主出版物標題Proceedings of 2023 IEEE 15th International Conference on ASIC, ASICON 2023
編輯Fan Ye, Ting-Ao Tang
發行者IEEE Computer Society
ISBN(電子)9798350312980
DOIs
出版狀態Published - 2023
事件15th IEEE International Conference on ASIC, ASICON 2023 - Nanjing, China
持續時間: 24 10月 202327 10月 2023

出版系列

名字Proceedings of International Conference on ASIC
ISSN(列印)2162-7541
ISSN(電子)2162-755X

Conference

Conference15th IEEE International Conference on ASIC, ASICON 2023
國家/地區China
城市Nanjing
期間24/10/2327/10/23

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