Intrinsic transconductance gmi is an important parameter for characterizing MOSFET's. As device dimensions approach the deep-submicrometer range, conventional methods of correcting for the source-drain resistance effect must be reexamined. Significant error in the extracted gmi Can arise from source-drain resistance asymmetry. A simple procedure is outlined to either correct for or to avoid this source of error. Using deep-submicrometer devices, experimental results are presented to demonstrate the severity of the potential error and to verify the applicability of the proposed technique. A method is also demonstrated which extracts the individual values of the source Rs and drain RD resistances.