Intrinsic Difference between 2-D Negative-Capacitance FETs with Semiconductor-on-Insulator and Double-Gate Structures

Keyphrases

• Field-effect Transistors 100%
• Double Gate Structure 100%
• Carbon Nanotube Field Effect Transistor (CNTFET) 100%
• Semiconductor-insulator Interfaces 100%
• Double Gate 66%
• Subthreshold Swing 66%
• Negative Capacitance 66%
• Internal Charge 66%
• Capacitance 33%
• Low Power Applications 33%
• Transition Metal Dichalcogenides 33%
• Subthreshold 33%
• Gate Metal 33%
• Bias Dependence 33%
• Voltage Gain 33%
• Back Gate 33%
• Semiconductor Characteristic 33%
• Capacitance Design 33%
• Capacitance Matching 33%
• Charging Voltage 33%
• Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) 33%
• Design Space 33%
• Large Curvature 33%
• Large Design Space 33%
• Gain Matching 33%

Material Science

• Field Effect Transistor 100%
• Capacitance 100%
• Ferroelectric Material 33%
• Transition Metal Dichalcogenide 16%