Intersublevel electroluminescence from In0.4Ga0.6As/GaAs quantum dots in quantum cascade heterostructure with GaAsN/GaAs superlattice

C. H. Fischer*, P. Bhattacharya, Peichen Yu

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Infrared light emission is demonstrated from In0.4Ga0.6As self-organised quantum dots in a quantum cascade structure incorporating a GaAs/GaAsN chirped superlattice. A TE polarised emission peak is observed at 22 μm, corresponding to the calculated first-excited to ground-state transition. Other emission peaks also correspond to predicted values.

原文English
頁(從 - 到)1537-1538
頁數2
期刊Electronics Letters
39
發行號21
DOIs
出版狀態Published - 16 十月 2003

指紋

深入研究「Intersublevel electroluminescence from In<sub>0.4</sub>Ga<sub>0.6</sub>As/GaAs quantum dots in quantum cascade heterostructure with GaAsN/GaAs superlattice」主題。共同形成了獨特的指紋。

引用此