Interruption-free growth of 10 μm-thick GaN film prepared on sputtered AlN/PSS template by hydride vapor phase epitaxy

Y. A. Chen, Cheng-Huang Kuo*, J. P. Wu, C. W. Chang

*此作品的通信作者

研究成果: Article › 同行評審

5 引文 斯高帕斯（Scopus）

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Engineering & Materials Science

Physics & Astronomy

Chemical Compounds