Internal ESD transients in input protection circuits

Y. Fong*, Chen-Ming Hu

*此作品的通信作者

研究成果: Paper同行評審

13 引文 斯高帕斯(Scopus)

摘要

The operation of a popular thick-field-device/grounded-gate transistor combination input protection circuit under electrostatic-discharge (ESD) stress is studied using a special test circuit. By monitoring internal voltages and currents, it was possible to observe how each element in the protection circuit contributed to the overall ESD protection. By means of the special test circuit it was determined that no degradation of the first gate-oxide transistor took place under ESD stress.

原文English
頁面77-81
頁數5
DOIs
出版狀態Published - 1 12月 1989
事件27th Annual Proceedings: Reliability Physics - 1989 -
持續時間: 11 4月 198911 4月 1989

Conference

Conference27th Annual Proceedings: Reliability Physics - 1989
期間11/04/8911/04/89

指紋

深入研究「Internal ESD transients in input protection circuits」主題。共同形成了獨特的指紋。

引用此