The operation of a popular thick-field-device/grounded-gate transistor combination input protection circuit under electrostatic-discharge (ESD) stress is studied using a special test circuit. By monitoring internal voltages and currents, it was possible to observe how each element in the protection circuit contributed to the overall ESD protection. By means of the special test circuit it was determined that no degradation of the first gate-oxide transistor took place under ESD stress.
|出版狀態||Published - 1 12月 1989|
|事件||27th Annual Proceedings: Reliability Physics - 1989 - |
持續時間: 11 4月 1989 → 11 4月 1989
|Conference||27th Annual Proceedings: Reliability Physics - 1989|
|期間||11/04/89 → 11/04/89|