Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits

Ming-Dou Ker; Chien Ming Lee

doi:10.1109/ISCAS.2003.1205559

Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits

Ming-Dou Ker^*, Chien Ming Lee

^*此作品的通信作者

研究成果: Conference article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.

原文	English
期刊	Proceedings - IEEE International Symposium on Circuits and Systems
卷	1
DOIs	https://doi.org/10.1109/ISCAS.2003.1205559
出版狀態	Published - 14 7月 2003
事件	Proceedings of the 2003 IEEE International Symposium on Circuits and Systems - Bangkok, 泰國持續時間: 25 5月 2003 → 28 5月 2003

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10.1109/ISCAS.2003.1205559

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title = "Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits",

abstract = "The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.",

author = "Ming-Dou Ker and Lee, {Chien Ming}",

year = "2003",

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doi = "10.1109/ISCAS.2003.1205559",

language = "English",

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AU - Ker, Ming-Dou

AU - Lee, Chien Ming

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N2 - The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.

AB - The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.

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U2 - 10.1109/ISCAS.2003.1205559

DO - 10.1109/ISCAS.2003.1205559

M3 - Conference article

AN - SCOPUS:0037820487

SN - 0271-4310

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JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

T2 - Proceedings of the 2003 IEEE International Symposium on Circuits and Systems

Y2 - 25 May 2003 through 28 May 2003

ER -

Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits

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