Interference of ESD protection diodes on RF performance in Giga-Hz RF circuits

Ming-Dou Ker*, Chien Ming Lee

*此作品的通信作者

    研究成果: Conference article同行評審

    12 引文 斯高帕斯(Scopus)

    摘要

    The power gain and noise figure of two kinds of diode structures in a 0.25-μm CMOS process is investigated by using the two-port GSG measurement in radio-frequency region (∼GHz). The power gain is degraded by ESD device with larger layout area and more serious at higher operating frequency. The noise figure is increased by ESD device with larger layout area and also is more serious at higher frequency. After the comparison on the power gain and MM ESD level between the poly-gated diode and the STI diode, the poly-gated diode is more suitable for ESD protection in RF circuits.

    原文English
    期刊Proceedings - IEEE International Symposium on Circuits and Systems
    1
    DOIs
    出版狀態Published - 14 7月 2003
    事件Proceedings of the 2003 IEEE International Symposium on Circuits and Systems - Bangkok, Thailand
    持續時間: 25 5月 200328 5月 2003

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