Interfacial reaction between amorphous silicon and palladium thin films

H. T.G. Hentzell*, P. A. Psaras, King-Ning Tu

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Interfacial reactions between amorphous Si and Pd films of thickness of 1, 5, 50 and 200 nm in the as-deposited state and after annealing from 200 to 500°C have been studied by transmission electron microscopy and Rutherford backscattering spectroscopy. An amorphous phase is observed in the as-deposited state in samples of 1 nm Pd on α-Si, yet Pd2Si is observed in the as-deposited and annealed states in thicker films. The growth of Pd2Si from 200 to 235°C is diffusion controlled with an activation energy of 1.25 eV. Enhanced crystallization of remaining α-Si in contact to Pd2Si occurs between 400 and 500°C.

原文English
頁(從 - 到)255-260
頁數6
期刊Materials Letters
3
發行號7-8
DOIs
出版狀態Published - 1 1月 1985

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