Interfacial reaction and schottky barrier in metal-silicon systems

G. Ottaviani*, King-Ning Tu, J. W. Mayer

*此作品的通信作者

研究成果: Article同行評審

110 引文 斯高帕斯(Scopus)

摘要

Electronic states at the metal-silicon interface have previously been postulated in order to explain the pinning of the Fermi level, and the origin of these states has been a matter of some dispute. We propose here that in a reactive interface, such as the interface between Si and transition metals, physical properties of the interface are related to an interfacial layer, and that the relationship is manifest through the correlation between Schottky barrier height and eutectic temperature.

原文English
頁(從 - 到)284-287
頁數4
期刊Physical Review Letters
44
發行號4
DOIs
出版狀態Published - 1 1月 1980

指紋

深入研究「Interfacial reaction and schottky barrier in metal-silicon systems」主題。共同形成了獨特的指紋。

引用此