Interfacial reaction and Schottky barrier between Pt and GaAs

C. Fontaine*, T. Okumura, King-Ning Tu

*此作品的通信作者

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70 引文 斯高帕斯(Scopus)

摘要

The interfacial reaction between Pt films and (100)-oriented n-type GaAs substrates in the temperature range between 350 and 500°C has been studied by combining transmission electron diffraction and microscopy, glancing-incidence x-ray diffraction, and Rutherford backscattering spectroscopy. The reaction has produced PtGa and PtAs2. The phase PtAs2 has shown a strong preferred orientation on (100)GaAs and it is the phase which dominates the contact to GaAs. The orientation relation has been analyzed by using stereographic projections. Effects of the reaction on the Schottky barrier behavior have been monitored by a combination of current-voltage, capacitance-voltage, and photoresponse measurements. The value of the Schottky barrier height has been determined to be 0.9 eV and no strong variation of the barrier height with annealing has been observed.

原文English
頁(從 - 到)1404-1412
頁數9
期刊Journal of Applied Physics
54
發行號3
DOIs
出版狀態Published - 1 12月 1983

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