Interfacial microstructure and electrical properties of PT/Al 2 O 3 /Si annealed at high temperatures

San-Yuan Chen; Chi Sheng Hsiao; Jung Jui Hsu

doi:10.1016/j.apsusc.2004.05.166

Interfacial microstructure and electrical properties of PT/Al ₂ O ₃ /Si annealed at high temperatures

San-Yuan Chen^*, Chi Sheng Hsiao, Jung Jui Hsu

^*此作品的通信作者

材料科學與工程學系

研究成果: Conference article › 同行評審

摘要

Pb _1+x TiO ₃ (PT) thin films were deposited on Al ₂ O ₃ (10nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600°C and excellent memory properties are obtained. However, with increasing annealing temperature above 700°C, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al ₂ O ₃ /Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al ₂ O ₃ /Si.

原文	English
頁（從 - 到）	429-432
頁數	4
期刊	Applied Surface Science
卷	238
發行號	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.apsusc.2004.05.166
出版狀態	Published - 15 11月 2004
事件	APHYS 2003 - Badajoz, Spain 持續時間: 13 10月 2003 → 18 10月 2003

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10.1016/j.apsusc.2004.05.166

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@article{3c34b0538fa9490690d8e22de1bffe02,

title = "Interfacial microstructure and electrical properties of PT/Al 2 O 3 /Si annealed at high temperatures",

abstract = " Pb 1+x TiO 3 (PT) thin films were deposited on Al 2 O 3 (10nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600°C and excellent memory properties are obtained. However, with increasing annealing temperature above 700°C, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al 2 O 3 /Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al 2 O 3 /Si.",

keywords = "Ferroelectric, Interfacial microstructure, Memory properties, PbTiO /Al O /Si",

author = "San-Yuan Chen and Hsiao, {Chi Sheng} and Hsu, {Jung Jui}",

year = "2004",

month = nov,

day = "15",

doi = "10.1016/j.apsusc.2004.05.166",

language = "English",

volume = "238",

pages = "429--432",

journal = "Applied Surface Science",

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publisher = "Elsevier",

number = "1-4 SPEC. ISS.",

note = "APHYS 2003 ; Conference date: 13-10-2003 Through 18-10-2003",

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TY - JOUR

T1 - Interfacial microstructure and electrical properties of PT/Al 2 O 3 /Si annealed at high temperatures

AU - Chen, San-Yuan

AU - Hsiao, Chi Sheng

AU - Hsu, Jung Jui

PY - 2004/11/15

Y1 - 2004/11/15

N2 - Pb 1+x TiO 3 (PT) thin films were deposited on Al 2 O 3 (10nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600°C and excellent memory properties are obtained. However, with increasing annealing temperature above 700°C, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al 2 O 3 /Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al 2 O 3 /Si.

AB - Pb 1+x TiO 3 (PT) thin films were deposited on Al 2 O 3 (10nm)/Si using lead acetate trihydrate and titanium isopropoxide with the addition of glycerol (GL) chelating agent as precursors. It was found that perovskite PT phase can be well crystallized at a lower temperature of 600°C and excellent memory properties are obtained. However, with increasing annealing temperature above 700°C, charge-injection mode instead of ferroelectric behavior was detected. Cross-sectional TEM results illustrate that with an increase of annealing temperature and Pb content in the PT films, diffusion envelops and even composition separations were detected in the interface of PT/Al 2 O 3 /Si. It was believed that the degradation in the ferroelectric memory properties is strongly related to the change of microstructure and composition in the interface of PT/Al 2 O 3 /Si.

KW - Ferroelectric

KW - Interfacial microstructure

KW - Memory properties

KW - PbTiO /Al O /Si

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U2 - 10.1016/j.apsusc.2004.05.166

DO - 10.1016/j.apsusc.2004.05.166

M3 - Conference article

AN - SCOPUS:4644301656

SN - 0169-4332

VL - 238

SP - 429

EP - 432

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4 SPEC. ISS.

T2 - APHYS 2003

Y2 - 13 October 2003 through 18 October 2003

ER -

Interfacial microstructure and electrical properties of PT/Al 2 O 3 /Si annealed at high temperatures

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Interfacial microstructure and electrical properties of PT/Al ₂ O ₃ /Si annealed at high temperatures