Interfacial mechanism studies of electroless plated Cu films on a-Ta:N layers catalyzed by PIII

Jian Hong Lin, Tzu Li Lee, Wei Jen Hsieh, Chien-Cheng Lin, Chwung Shan Kou, Han C. Shih*

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

An attempt was made to combine the process of PIII and electroless plating techniques in the formation of a copper film on the as-deposited wafers consisting of a-Ta:N and fluorosilicate glass (FSG) lauers. The Cu/a-TaN interfacial and crystallographic structures after the specimen being annealed were analyzed. It was found that as the annealing temperature increased, the interdiffusion zone of the Cu/(Pd)/a-Ta:N assembly tends to be widened. When the PIII Pd was used as a catalyst, the electric resistivity of annealed copper films decreased with increasing annealing temperature. The annealing-free copper film provided a strong <111> texture.

原文English
頁(從 - 到)733-740
頁數8
期刊Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
20
發行號3
DOIs
出版狀態Published - 1 五月 2002

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