@inproceedings{24a37b799a534eea998f1007b0c15ecf,
title = "Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications",
abstract = "This article reports an improvement in the low- frequency noise characteristics in hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) engineering. FeFET devices with silicon dioxide (SiO2) and silicon oxynitride (SiON) as IL were fabricated and characterised. FeFETs with SiON interfaces demonstrated an excellent improvement in variation, and low-frequency noise characteristics. The wider memory window for operation in FeFETs with SiON IL also allows for a higher noise tolerance during the inference operation. Finally, the evaluation of system performance by neuromorphic simulation shows that FeFET with SiON IL are highly immune to noise degradation and endurance, without retention penalty.",
keywords = "FeFET, Flicker noise, hafnium oxide, interface traps, interface treatments, neuromorphic computing",
author = "Yannick Raffel and Sunanda Thunder and Maximilian Lederer and Ricardo Olivo and Raik Hoffmann and Luca Pirro and Sven Beyer and Talha Chohan and Huang, {Po Tsang} and Sourav De and Thomas Kampfe and Konrad Seidel and Johannes Heitman",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022 ; Conference date: 21-09-2022 Through 23-09-2022",
year = "2022",
doi = "10.1109/ICICDT56182.2022.9933119",
language = "English",
series = "Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "8--11",
editor = "Xuan-Tu Tran and Duy-Hieu Bui",
booktitle = "Proceedings of 2022 IEEE International Conference on IC Design and Technology, ICICDT 2022",
address = "United States",
}