Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array

H. L. Chiang, J. F. Wang, K. H. Lin, C. H. Nien, J. J. Wu, K. Y. Hsiang, C. P. Chuu, Y. W. Chen, X. W. Zhang, C. W. Liu, Tahui Wang, C. C. Wang, M. H. Lee, M. F. Chang, C. S. Chang, T. C. Chen*

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.

原文English
主出版物標題2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面361-362
頁數2
ISBN(電子)9781665497725
DOIs
出版狀態Published - 2022
事件2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States
持續時間: 12 6月 202217 6月 2022

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2022-June
ISSN(列印)0743-1562

Conference

Conference2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
國家/地區United States
城市Honolulu
期間12/06/2217/06/22

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