Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array

H. L. Chiang; J. F. Wang; K. H. Lin; C. H. Nien; J. J. Wu; K. Y. Hsiang; C. P. Chuu; Y. W. Chen; X. W. Zhang; C. W. Liu; Tahui Wang; C. C. Wang; M. H. Lee; M. F. Chang; C. S. Chang; T. C. Chen

doi:10.1109/VLSITechnologyandCir46769.2022.9830462

Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array

H. L. Chiang, J. F. Wang, K. H. Lin, C. H. Nien, J. J. Wu, K. Y. Hsiang, C. P. Chuu, Y. W. Chen, X. W. Zhang, C. W. Liu, Tahui Wang, C. C. Wang, M. H. Lee, M. F. Chang, C. S. Chang, T. C. Chen^*

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

3 引文斯高帕斯（Scopus）

摘要

For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.

原文	English
主出版物標題	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	361-362
頁數	2
ISBN（電子）	9781665497725
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830462
出版狀態	Published - 2022
事件	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States 持續時間: 12 6月 2022 → 17 6月 2022

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2022-June
ISSN（列印）	0743-1562

Conference

Conference	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
國家/地區	United States
城市	Honolulu
期間	12/06/22 → 17/06/22

存取文件

10.1109/VLSITechnologyandCir46769.2022.9830462

其它文件與鏈接

Link to publication in Scopus

引用此

Chiang, H. L., Wang, J. F., Lin, K. H., Nien, C. H., Wu, J. J., Hsiang, K. Y., Chuu, C. P., Chen, Y. W., Zhang, X. W., Liu, C. W., Wang, T., Wang, C. C., Lee, M. H., Chang, M. F., Chang, C. S., & Chen, T. C. (2022). Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 (頁 361-362). (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830462

@inproceedings{3b5adf464aa34e53828bebcd528d716e,

title = "Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array",

abstract = "For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.",

author = "Chiang, {H. L.} and Wang, {J. F.} and Lin, {K. H.} and Nien, {C. H.} and Wu, {J. J.} and Hsiang, {K. Y.} and Chuu, {C. P.} and Chen, {Y. W.} and Zhang, {X. W.} and Liu, {C. W.} and Tahui Wang and Wang, {C. C.} and Lee, {M. H.} and Chang, {M. F.} and Chang, {C. S.} and Chen, {T. C.}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 ; Conference date: 12-06-2022 Through 17-06-2022",

year = "2022",

doi = "10.1109/VLSITechnologyandCir46769.2022.9830462",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "361--362",

booktitle = "2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022",

address = "United States",

}

Chiang, HL, Wang, JF, Lin, KH, Nien, CH, Wu, JJ, Hsiang, KY, Chuu, CP, Chen, YW, Zhang, XW, Liu, CW, Wang, T, Wang, CC, Lee, MH, Chang, MF, Chang, CS & Chen, TC 2022, Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Digest of Technical Papers - Symposium on VLSI Technology, 卷 2022-June, Institute of Electrical and Electronics Engineers Inc., 頁 361-362, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, Honolulu, United States, 12/06/22. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830462

Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. / Chiang, H. L.; Wang, J. F.; Lin, K. H. 等.
2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 361-362 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices

T2 - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

AU - Chiang, H. L.

AU - Wang, J. F.

AU - Lin, K. H.

AU - Nien, C. H.

AU - Wu, J. J.

AU - Hsiang, K. Y.

AU - Chuu, C. P.

AU - Chen, Y. W.

AU - Zhang, X. W.

AU - Liu, C. W.

AU - Wang, Tahui

AU - Wang, C. C.

AU - Lee, M. H.

AU - Chang, M. F.

AU - Chang, C. S.

AU - Chen, T. C.

PY - 2022

Y1 - 2022

N2 - For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.

AB - For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (-6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.

UR - http://www.scopus.com/inward/record.url?scp=85135238627&partnerID=8YFLogxK

U2 - 10.1109/VLSITechnologyandCir46769.2022.9830462

DO - 10.1109/VLSITechnologyandCir46769.2022.9830462

M3 - Conference contribution

AN - SCOPUS:85135238627

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 361

EP - 362

BT - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 12 June 2022 through 17 June 2022

ER -

Chiang HL, Wang JF, Lin KH, Nien CH, Wu JJ, Hsiang KY 等. Interfacial-Layer Design for Hf_1-xZr_xO₂-Based FTJ Devices: From Atom to Array. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 361-362. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnologyandCir46769.2022.9830462