Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs

Yiming Li; Hui Wen Cheng; Yung Yueh Chiu

doi:10.1016/j.mee.2011.03.040

Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs

Yiming Li^*
, Hui Wen Cheng
, Yung Yueh Chiu

^*此作品的通信作者

電機工程學系

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO₂ film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated.

原文	English
頁（從 - 到）	1269-1271
頁數	3
期刊	Microelectronic Engineering
卷	88
發行號	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.040
出版狀態	Published - 7月 2011

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10.1016/j.mee.2011.03.040

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title = "Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs",

abstract = "In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated.",

keywords = "Combination of interface trap and random dopant fluctuations, High-κ/metal gate, Interface trap, Interface trap fluctuation, Random dopant, Random dopant fluctuation, Threshold voltage fluctuation",

author = "Yiming Li and Cheng, \{Hui Wen\} and Chiu, \{Yung Yueh\}",

year = "2011",

month = jul,

doi = "10.1016/j.mee.2011.03.040",

language = "English",

volume = "88",

pages = "1269--1271",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "7",

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TY - JOUR

T1 - Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs

AU - Li, Yiming

AU - Cheng, Hui Wen

AU - Chiu, Yung Yueh

PY - 2011/7

Y1 - 2011/7

N2 - In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated.

AB - In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated.

KW - Combination of interface trap and random dopant fluctuations

KW - High-κ/metal gate

KW - Interface trap

KW - Interface trap fluctuation

KW - Random dopant

KW - Random dopant fluctuation

KW - Threshold voltage fluctuation

UR - https://www.scopus.com/pages/publications/79958040073

U2 - 10.1016/j.mee.2011.03.040

DO - 10.1016/j.mee.2011.03.040

M3 - Article

AN - SCOPUS:79958040073

SN - 0167-9317

VL - 88

SP - 1269

EP - 1271

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7

ER -

Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs

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