TY - JOUR
T1 - Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs
AU - Li, Yiming
AU - Cheng, Hui Wen
AU - Chiu, Yung Yueh
PY - 2011/7
Y1 - 2011/7
N2 - In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated.
AB - In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO2 film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated.
KW - Combination of interface trap and random dopant fluctuations
KW - High-κ/metal gate
KW - Interface trap
KW - Interface trap fluctuation
KW - Random dopant
KW - Random dopant fluctuation
KW - Threshold voltage fluctuation
UR - http://www.scopus.com/inward/record.url?scp=79958040073&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2011.03.040
DO - 10.1016/j.mee.2011.03.040
M3 - Article
AN - SCOPUS:79958040073
SN - 0167-9317
VL - 88
SP - 1269
EP - 1271
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 7
ER -