@inproceedings{2bfbe318f04b4e98b2eb2944eb57f809,
title = "Interface morphology investigation of bonded p-GaAs/p-Si wafers",
abstract = "The integration of GaAs and Si can combine the superior electrical and optical properties of GaAs with the mechanical and economical advantages of Si. It presents great potential for OEICs applications. In this study, direct wafer bonding was applied to combine bulk p-Si and p-GaAs. Interface morphologies of bonded p-GaAs/p-Si wafers were investigated by TEM.",
author = "Hsieh, {Cheng Yu} and Yew-Chuhg Wu",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3483526",
language = "English",
isbn = "9781566778237",
series = "ECS Transactions",
number = "4",
pages = "371--374",
booktitle = "Semiconductor Wafer Bonding 11",
edition = "4",
note = "Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gosele - 218th ECS Meeting ; Conference date: 10-10-2010 Through 15-10-2010",
}