Interface engineered HfO₂-based 3D vertical ReRAM

Keyphrases

• Silica 100%
• HfO2 100%
• Resistive Random Access Memory (ReRAM) 100%
• Interface-engineered 100%
• Bottom Interface 66%
• In Situ 33%
• Double Layer 33%
• Dry Etching 33%
• Sidewall 33%
• CMOS Technology 33%
• Interface Engineering 33%
• Freeform 33%
• Memory Cell 33%
• Read Disturb 33%
• Low Resistance State 33%
• Atomic Layer Deposition 33%
• Nonlinearity 33%
• Free Operation 33%
• Stacked Cells 33%
• Forming Voltage 33%
• Pulse Mode 33%
• Memory Stacking 33%
• High Endurance 33%
• Switching Layer 33%
• Fast Switching Speed 33%
• Compliance Current 33%
• Voltage Reduction 33%
• Switch Region 33%
• Write Disturb 33%
• Switching Stability 33%
• Write Cycle 33%
• Vertically Stacked 33%
• Active Switching 33%
• Vertical Profile 33%
• AC Pulses 33%
• Set Operations 33%
• Cell Retention 33%

Engineering

• Resistive Random Access Memory 100%
• Silicon Dioxide 100%
• Side Wall 33%
• Engineering 33%
• Atomic Layer Deposition 33%
• Dry Etching 33%
• Double Layer 33%
• Switching Speed 33%
• Set Operation 33%
• Nonlinearity 33%

Material Science

• Resistive Random-Access Memory 100%
• Dry Etching 33%