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Interface Characterization of HfO2/GaSb MOS Capacitors with Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment

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10 引文 斯高帕斯（Scopus）

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深入研究「Interface Characterization of HfO2/GaSb MOS Capacitors with Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment」主題。共同形成了獨特的指紋。
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Engineering

Material Science

Physics