Interdiffusion of Cu-Sn system with Ni ultra-thin buffer layer and material analysis of IMC growth mechanism

Cheng Han Fan, Yao Jen Chang, Yi Chia Chou, Kuan Neng Chen

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this paper, Ni ultra-thin diffusion buffer layer between Cu/Sn is inserted to suppress the IMC (η-phase) inter-diffusion reaction. We analogy the bonding condition by using single side Cu/Ni buffer layer/Sn structure. The inter-diffusion behaviors and IMC growth are investigated under the same thermal budget of bonding temperature during the heating step. Cu/Sn IMC formation behavior with Ni buffer layer is summarized by the SEM inspection. In the results of different Ni buffer layers (tNi = 0, 50, 100, 150 Å) and thermal durations (0 to 60 sec), Ni buffer layer insertion can effectively reduce Cu/Sn IMC thickness. In addition, rapid growth of ∼1.5 μm Cu/Sn IMC thickness at 250 °C for only 10 sec is discovered. As results, 100 Å Ni buffer layer is necessary to apply as the Cu/Sn system enters the submicron pad bonding interconnects.

原文English
主出版物標題2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference
主出版物子標題Challenges of Change - Shaping the Future, IMPACT 2014 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面37-40
頁數4
ISBN(電子)9781479977277
DOIs
出版狀態Published - 1 1月 2014
事件9th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2014 - Taipei, 台灣
持續時間: 22 10月 201424 10月 2014

出版系列

名字2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference: Challenges of Change - Shaping the Future, IMPACT 2014 - Proceedings

Conference

Conference9th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2014
國家/地區台灣
城市Taipei
期間22/10/1424/10/14

指紋

深入研究「Interdiffusion of Cu-Sn system with Ni ultra-thin buffer layer and material analysis of IMC growth mechanism」主題。共同形成了獨特的指紋。

引用此