TY - GEN
T1 - Interdiffusion of Cu-Sn system with Ni ultra-thin buffer layer and material analysis of IMC growth mechanism
AU - Fan, Cheng Han
AU - Chang, Yao Jen
AU - Chou, Yi Chia
AU - Chen, Kuan Neng
PY - 2014/1/1
Y1 - 2014/1/1
N2 - In this paper, Ni ultra-thin diffusion buffer layer between Cu/Sn is inserted to suppress the IMC (η-phase) inter-diffusion reaction. We analogy the bonding condition by using single side Cu/Ni buffer layer/Sn structure. The inter-diffusion behaviors and IMC growth are investigated under the same thermal budget of bonding temperature during the heating step. Cu/Sn IMC formation behavior with Ni buffer layer is summarized by the SEM inspection. In the results of different Ni buffer layers (tNi = 0, 50, 100, 150 Å) and thermal durations (0 to 60 sec), Ni buffer layer insertion can effectively reduce Cu/Sn IMC thickness. In addition, rapid growth of ∼1.5 μm Cu/Sn IMC thickness at 250 °C for only 10 sec is discovered. As results, 100 Å Ni buffer layer is necessary to apply as the Cu/Sn system enters the submicron pad bonding interconnects.
AB - In this paper, Ni ultra-thin diffusion buffer layer between Cu/Sn is inserted to suppress the IMC (η-phase) inter-diffusion reaction. We analogy the bonding condition by using single side Cu/Ni buffer layer/Sn structure. The inter-diffusion behaviors and IMC growth are investigated under the same thermal budget of bonding temperature during the heating step. Cu/Sn IMC formation behavior with Ni buffer layer is summarized by the SEM inspection. In the results of different Ni buffer layers (tNi = 0, 50, 100, 150 Å) and thermal durations (0 to 60 sec), Ni buffer layer insertion can effectively reduce Cu/Sn IMC thickness. In addition, rapid growth of ∼1.5 μm Cu/Sn IMC thickness at 250 °C for only 10 sec is discovered. As results, 100 Å Ni buffer layer is necessary to apply as the Cu/Sn system enters the submicron pad bonding interconnects.
UR - http://www.scopus.com/inward/record.url?scp=84925878373&partnerID=8YFLogxK
U2 - 10.1109/IMPACT.2014.7048448
DO - 10.1109/IMPACT.2014.7048448
M3 - Conference contribution
AN - SCOPUS:84925878373
T3 - 2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference: Challenges of Change - Shaping the Future, IMPACT 2014 - Proceedings
SP - 37
EP - 40
BT - 2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2014
Y2 - 22 October 2014 through 24 October 2014
ER -