Interdiffusion in copper-aluminum thin film bilayers. II. Analysis of marker motion during sequential compound formation

H. T.G. Hentzell*, King-Ning Tu

*此作品的通信作者

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

Isolated W islands, 150 Å in diameter, have been deposited between Cu and Al thin film bilayers to serve as inert diffusion markers. Marker displacements have been measured consecutively by Rutherford backscattering spectroscopy during the sequential growth of CuAl2, CuAl, and Cu 9Al4 intermetallic compounds upon annealing in the temperature range 160-250 °C. The intrinsic interdiffusion coefficients of Al and Cu in each of these compounds have been determined by applying an analysis of marker motion in a binary diffusion couple to the measured displacement data. Moreover, the prefactor and activation energy of the individual diffusivities have been calculated as shown below by measuring the marker motion as a function of temperature. For CuAl2, D 0Al =0.4 cm2/s, QAl =1.25±0.05 eV, D0Cu =9.5 cm2/s, QCu =1.40±0.05 eV. For CuAl, D0Al =1.5×10-7 cm2/s, QAl =0.7±0.05 eV, D0Cu =1×10- 2 cm2/s, QCu =1.1±0.05 eV. For Cu 9Al4, D0Al =1.7×10- 3 cm2/s, QAl =1.20±0.05 eV, D 0Cu =2.4×10-2 cm2/s, Q Cu =1.30±0.05 eV. These values agree quite well to those chemical interdiffusion coefficients published in the literature for bulk samples. A discussion on sequential compound formation has been given on the basis of these measured values.

原文English
頁(從 - 到)6929-6937
頁數9
期刊Journal of Applied Physics
54
發行號12
DOIs
出版狀態Published - 1 12月 1983

指紋

深入研究「Interdiffusion in copper-aluminum thin film bilayers. II. Analysis of marker motion during sequential compound formation」主題。共同形成了獨特的指紋。

引用此