Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation

H. T.G. Hentzell; R. D. Thompson; King-Ning Tu

doi:10.1063/1.331999

Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation

H. T.G. Hentzell^*, R. D. Thompson, King-Ning Tu

^*此作品的通信作者

國際半導體產業學院

研究成果: Article › 同行評審

56 引文斯高帕斯（Scopus）

摘要

Interdiffusion in Cu-Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing-incidence x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with θ-CuAl ₂ forming first, followed by η ₂ -CuAl, and γ ₂ - Cu ₉ Al ₄ . In samples with excess Al, the θ-CuAl ₂ is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of θ-CuAl ₂ can be described by a prefactor of 7.4 cm ² /s and an activation energy of 1.31 eV.

原文	English
頁（從 - 到）	6923-6928
頁數	6
期刊	Journal of Applied Physics
卷	54
發行號	12
DOIs	https://doi.org/10.1063/1.331999
出版狀態	Published - 1 12月 1983

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title = "Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation",

abstract = " Interdiffusion in Cu-Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing-incidence x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with θ-CuAl 2 forming first, followed by η 2 -CuAl, and γ 2 - Cu 9 Al 4 . In samples with excess Al, the θ-CuAl 2 is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of θ-CuAl 2 can be described by a prefactor of 7.4 cm 2 /s and an activation energy of 1.31 eV. ",

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AU - Hentzell, H. T.G.

AU - Thompson, R. D.

AU - Tu, King-Ning

PY - 1983/12/1

Y1 - 1983/12/1

N2 - Interdiffusion in Cu-Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing-incidence x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with θ-CuAl 2 forming first, followed by η 2 -CuAl, and γ 2 - Cu 9 Al 4 . In samples with excess Al, the θ-CuAl 2 is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of θ-CuAl 2 can be described by a prefactor of 7.4 cm 2 /s and an activation energy of 1.31 eV.

AB - Interdiffusion in Cu-Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing-incidence x-ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with θ-CuAl 2 forming first, followed by η 2 -CuAl, and γ 2 - Cu 9 Al 4 . In samples with excess Al, the θ-CuAl 2 is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of θ-CuAl 2 can be described by a prefactor of 7.4 cm 2 /s and an activation energy of 1.31 eV.

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DO - 10.1063/1.331999

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation

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