Interactions in the Co/Si thin-film system. I. Kinetics

S. S. Lau*, J. W. Mayer, King-Ning Tu

*此作品的通信作者

研究成果: Article同行評審

168 引文 斯高帕斯(Scopus)

摘要

Interactions in the Co/Si thin-film system were investigated by MeV backscattering and x-ray-diffraction techniques. It was found that Si diffuses through the Co layer and accumulates at the sample surface at about 300 °C. Increasing the temperature causes the growth of the Co2Si phase, followed by the simultaneous growth of the CoSi phase. The growth rates for both phases have a square root of time dependence. The activation energies of growth are 1.5 and 1.9 eV for the Co2Si and CoSi phase, respectively. A model for the growth of multiple phases is suggested. The transformation between CoSi2 and CoSi is found to be a reversible reaction.

原文English
頁(從 - 到)4005-4010
頁數6
期刊Journal of Applied Physics
49
發行號7
DOIs
出版狀態Published - 1 12月 1978

指紋

深入研究「Interactions in the Co/Si thin-film system. I. Kinetics」主題。共同形成了獨特的指紋。

引用此