Interaction between chromium oxide and chromium silicide

A. Cros; R. A. Pollak; King-Ning Tu

doi:10.1063/1.331694

Interaction between chromium oxide and chromium silicide

A. Cros^*, R. A. Pollak, King-Ning Tu

^*此作品的通信作者

國際半導體產業學院

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr ₂O₃ and CrSi₂. We observed that upon annealing a Cr film on a Si substrate at 550°C to form CrSi₂, the native chromium surface oxide will decompose while a film of SiO₂ will form when the CrSi₂ growth front reaches the Cr₂O₃.

原文	English
頁（從 - 到）	258-259
頁數	2
期刊	Journal of Applied Physics
卷	54
發行號	1
DOIs	https://doi.org/10.1063/1.331694
出版狀態	Published - 1 12月 1983

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title = "Interaction between chromium oxide and chromium silicide",

abstract = "We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr 2O3 and CrSi2. We observed that upon annealing a Cr film on a Si substrate at 550°C to form CrSi2, the native chromium surface oxide will decompose while a film of SiO2 will form when the CrSi2 growth front reaches the Cr2O3.",

author = "A. Cros and Pollak, {R. A.} and King-Ning Tu",

year = "1983",

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T1 - Interaction between chromium oxide and chromium silicide

AU - Cros, A.

AU - Pollak, R. A.

AU - Tu, King-Ning

PY - 1983/12/1

Y1 - 1983/12/1

N2 - We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr 2O3 and CrSi2. We observed that upon annealing a Cr film on a Si substrate at 550°C to form CrSi2, the native chromium surface oxide will decompose while a film of SiO2 will form when the CrSi2 growth front reaches the Cr2O3.

AB - We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr 2O3 and CrSi2. We observed that upon annealing a Cr film on a Si substrate at 550°C to form CrSi2, the native chromium surface oxide will decompose while a film of SiO2 will form when the CrSi2 growth front reaches the Cr2O3.

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U2 - 10.1063/1.331694

DO - 10.1063/1.331694

M3 - Article

AN - SCOPUS:0020497984

VL - 54

SP - 258

EP - 259

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

ER -

Interaction between chromium oxide and chromium silicide

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