Interaction between chromium oxide and chromium silicide

A. Cros*, R. A. Pollak, King-Ning Tu

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We have used x-ray induced photoemission spectroscopy and Rutherford backscattering spectroscopy to study the chemical reaction between Cr 2O3 and CrSi2. We observed that upon annealing a Cr film on a Si substrate at 550°C to form CrSi2, the native chromium surface oxide will decompose while a film of SiO2 will form when the CrSi2 growth front reaches the Cr2O3.

原文English
頁(從 - 到)258-259
頁數2
期刊Journal of Applied Physics
54
發行號1
DOIs
出版狀態Published - 1 12月 1983

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