Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Keyphrases

• Annealing 100%
• Thermal Oxidation 100%
• Metal-oxide-semiconductor Devices 100%
• Germanium 100%
• GeOx 66%
• Low Temperature 33%
• Low Density 33%
• X-ray Photoelectron Spectroscopy 33%
• Dielectric 33%
• Capacitance 33%
• Gate Dielectric 33%
• Aluminum Oxide 33%
• Ge Surface 33%
• Frequency Dispersion 33%
• Interface Traps 33%
• Passivation Layer 33%
• Atomic Layer Deposition 33%
• Bulk Trap Density 33%
• Passivation Effect 33%
• Quality Gates 33%
• Small Hysteresis 33%
• Capacitance Measurement 33%
• Surface Passivation 33%
• Dangling Bonds 33%
• Microwave Activation 33%
• Density Value 33%
• Post Deposition 33%
• Layer Materials 33%
• Midgap 33%

Material Science

• Oxidation Reaction 100%
• Germanium 100%
• Metal Oxide 100%
• Oxide Semiconductor 100%
• Semiconductor Device 100%
• Density 75%
• Dielectric Material 50%
• Capacitance 25%
• Al2O3 25%
• Capacitance Measurement 25%
• Photoemission Spectroscopy 25%
• Surface Passivation 25%
• Surface (Surface Science) 25%