Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

Humaira Taz; Bhagwati Prasad; Yen-Lin Huang; Zuhuang Chen; Shang Lin Hsu; Ruijuan Xu; Vishal Thakare; Tamil Selvan Sakthivel; Chenze Liu; Mark Hettick; Rupam Mukherjee; Sudipta Seal; Lane W. Martin; Ali Javey; Gerd Duscher; Ramamoorthy Ramesh; Ramki Kalyanaraman

doi:10.1038/s41598-020-58592-5

Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

Humaira Taz, Bhagwati Prasad^*, Yen-Lin Huang, Zuhuang Chen, Shang Lin Hsu, Ruijuan Xu, Vishal Thakare, Tamil Selvan Sakthivel, Chenze Liu, Mark Hettick, Rupam Mukherjee, Sudipta Seal, Lane W. Martin, Ali Javey, Gerd Duscher, Ramamoorthy Ramesh, Ramki Kalyanaraman

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

22 引文斯高帕斯（Scopus）

摘要

A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe_0.66Dy_0.24Tb_0.1)₃O_7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO₃. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO₃ validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO₃ with no sign of degradation after ~10¹⁰ switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.

原文	English
文章編號	3583
頁（從 - 到）	1-10
頁數	10
期刊	Scientific reports
卷	10
發行號	1
DOIs	https://doi.org/10.1038/s41598-020-58592-5
出版狀態	Published - 1 12月 2020

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Taz, H., Prasad, B., Huang, Y.-L., Chen, Z., Hsu, S. L., Xu, R., Thakare, V., Sakthivel, T. S., Liu, C., Hettick, M., Mukherjee, R., Seal, S., Martin, L. W., Javey, A., Duscher, G., Ramesh, R., & Kalyanaraman, R. (2020). Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics. Scientific reports, 10(1), 1-10. 文章 3583. https://doi.org/10.1038/s41598-020-58592-5

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title = "Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics",

abstract = "A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after ~1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.",

author = "Humaira Taz and Bhagwati Prasad and Yen-Lin Huang and Zuhuang Chen and Hsu, {Shang Lin} and Ruijuan Xu and Vishal Thakare and Sakthivel, {Tamil Selvan} and Chenze Liu and Mark Hettick and Rupam Mukherjee and Sudipta Seal and Martin, {Lane W.} and Ali Javey and Gerd Duscher and Ramamoorthy Ramesh and Ramki Kalyanaraman",

note = "Publisher Copyright: {\textcopyright} 2020, The Author(s).",

year = "2020",

month = dec,

day = "1",

doi = "10.1038/s41598-020-58592-5",

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Taz, H, Prasad, B, Huang, Y-L, Chen, Z, Hsu, SL, Xu, R, Thakare, V, Sakthivel, TS, Liu, C, Hettick, M, Mukherjee, R, Seal, S, Martin, LW, Javey, A, Duscher, G, Ramesh, R & Kalyanaraman, R 2020, 'Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics', Scientific reports, 卷 10, 編號 1, 3583, 頁 1-10. https://doi.org/10.1038/s41598-020-58592-5

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T1 - Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

AU - Taz, Humaira

AU - Prasad, Bhagwati

AU - Huang, Yen-Lin

AU - Chen, Zuhuang

AU - Hsu, Shang Lin

AU - Xu, Ruijuan

AU - Thakare, Vishal

AU - Sakthivel, Tamil Selvan

AU - Liu, Chenze

AU - Hettick, Mark

AU - Mukherjee, Rupam

AU - Seal, Sudipta

AU - Martin, Lane W.

AU - Javey, Ali

AU - Duscher, Gerd

AU - Ramesh, Ramamoorthy

AU - Kalyanaraman, Ramki

PY - 2020/12/1

Y1 - 2020/12/1

N2 - A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after ~1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.

AB - A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after ~1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.

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Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

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