摘要
In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k ∼ 7), the HSQ passivation layer (k ∼ 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs).
原文 | English |
---|---|
頁(從 - 到) | 70-74 |
頁數 | 5 |
期刊 | Thin Solid Films |
卷 | 498 |
發行號 | 1-2 |
DOIs | |
出版狀態 | Published - 1 3月 2006 |
事件 | Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - 持續時間: 12 11月 2004 → 14 11月 2004 |