Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs

Ta Shan Chang, Ting Chang Chang*, Po-Tsun Liu, Tien Shan Chang, Feng Sheng Yeh

*此作品的通信作者

研究成果: Conference article同行評審

10 引文 斯高帕斯(Scopus)

摘要

In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k ∼ 7), the HSQ passivation layer (k ∼ 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs).

原文English
頁(從 - 到)70-74
頁數5
期刊Thin Solid Films
498
發行號1-2
DOIs
出版狀態Published - 1 3月 2006
事件Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
持續時間: 12 11月 200414 11月 2004

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