Integrable Germanium Few-Hole Double Quantum-Dots and Single-Hole Transistors using CMOS Fabrication Apporaches

Chi Cheng Lai, I. Hsiang Wang, Ting Tsai, Horng Chih Lin, Pei Wen Li*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We report Ge few-hole double quantum-dots (DQDs) integrable with single-hole transistors (SHTs) for high-sensitivity charge detection. Ge DQDs with 20 nm diameter are closely coupled via a 10 nm-thick Si barrier, inducing strong inter-QD coupling. Thanks to strong quantum confinement induced by self-organized, hard-wall barriers of Si3N4/SiO2 , Ge SHT exhibits aperiodic oscillatory current behaviors with high peak to valley current ratio (<200) , low leakage (~40 fA) , and large addition energy (<15 meV) , offering great promises for high-fidelity charge sensing.

原文English
主出版物標題2023 Silicon Nanoelectronics Workshop, SNW 2023
發行者Institute of Electrical and Electronics Engineers Inc.
頁面95-96
頁數2
ISBN(電子)9784863488083
DOIs
出版狀態Published - 2023
事件26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
持續時間: 11 6月 202312 6月 2023

出版系列

名字2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference26th Silicon Nanoelectronics Workshop, SNW 2023
國家/地區Japan
城市Kyoto
期間11/06/2312/06/23

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