In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

M. L. Huang; S. W. Chang; M. K. Chen; C. H. Fan; H. T. Lin; C. H. Lin; R. L. Chu; K. Y. Lee; M. A. Khaderbad; Z. C. Chen; Chun-Hsiung Lin; C. H. Chen; L. T. Lin; H. J. Lin; H. C. Chang; C. L. Yang; Y. K. Leung; Y. C. Yeo; S. M. Jang; H. Y. Hwang; Carlos H. Diaz

doi:10.1109/VLSIT.2015.7223675

In_0.53Ga_0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

M. L. Huang, S. W. Chang, M. K. Chen, C. H. Fan, H. T. Lin, C. H. Lin, R. L. Chu, K. Y. Lee, M. A. Khaderbad, Z. C. Chen, Chun-Hsiung Lin, C. H. Chen, L. T. Lin, H. J. Lin, H. C. Chang, C. L. Yang, Y. K. Leung, Y. C. Yeo, S. M. Jang, H. Y. HwangCarlos H. Diaz

國際半導體產業學院

研究成果: Conference contribution › 同行評審

38 引文斯高帕斯（Scopus）

摘要

In_0.53Ga_0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In_0.53Ga_0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., I_on/I_off ∼10⁵, DIBL ∼51 mV/V at V_ds = 0.5V for L_g=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μ_EF = 1837 cm²/V-s with EOT ∼ 0.9 nm) is among the highest values reported for surface channel In_0.53Ga_0.47As MOSFETs.

原文	English
主出版物標題	2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	T204-T205
ISBN（電子）	9784863485013
DOIs	https://doi.org/10.1109/VLSIT.2015.7223675
出版狀態	Published - 25 8月 2015
事件	Symposium on VLSI Technology, VLSI Technology 2015 - Kyoto, 日本持續時間: 16 6月 2015 → 18 6月 2015

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2015-August
ISSN（列印）	0743-1562

Conference

Conference	Symposium on VLSI Technology, VLSI Technology 2015
國家/地區	日本
城市	Kyoto
期間	16/06/15 → 18/06/15

存取文件

10.1109/VLSIT.2015.7223675

其它文件與鏈接

Link to publication in Scopus

引用此

Huang, M. L., Chang, S. W., Chen, M. K., Fan, C. H., Lin, H. T., Lin, C. H., Chu, R. L., Lee, K. Y., Khaderbad, M. A., Chen, Z. C., Lin, C.-H., Chen, C. H., Lin, L. T., Lin, H. J., Chang, H. C., Yang, C. L., Leung, Y. K., Yeo, Y. C., Jang, S. M., ... Diaz, C. H. (2015). In_0.53Ga_0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate. 於 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers (頁 T204-T205). 文章 7223675 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2015.7223675

Huang, M. L. ; Chang, S. W. ; Chen, M. K. 等. / In_0.53Ga_0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate. 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2015. 頁 T204-T205 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{ac0498d1f6084146a53c8bf6f724af29,

title = "In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate",

abstract = "In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., Ion/Ioff ∼105, DIBL ∼51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μEF = 1837 cm2/V-s with EOT ∼ 0.9 nm) is among the highest values reported for surface channel In0.53Ga0.47As MOSFETs.",

author = "Huang, {M. L.} and Chang, {S. W.} and Chen, {M. K.} and Fan, {C. H.} and Lin, {H. T.} and Lin, {C. H.} and Chu, {R. L.} and Lee, {K. Y.} and Khaderbad, {M. A.} and Chen, {Z. C.} and Chun-Hsiung Lin and Chen, {C. H.} and Lin, {L. T.} and Lin, {H. J.} and Chang, {H. C.} and Yang, {C. L.} and Leung, {Y. K.} and Yeo, {Y. C.} and Jang, {S. M.} and Hwang, {H. Y.} and Diaz, {Carlos H.}",

year = "2015",

month = aug,

day = "25",

doi = "10.1109/VLSIT.2015.7223675",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "T204--T205",

booktitle = "2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers",

address = "美國",

note = "Symposium on VLSI Technology, VLSI Technology 2015 ; Conference date: 16-06-2015 Through 18-06-2015",

}

Huang, ML, Chang, SW, Chen, MK, Fan, CH, Lin, HT, Lin, CH, Chu, RL, Lee, KY, Khaderbad, MA, Chen, ZC, Lin, C-H, Chen, CH, Lin, LT, Lin, HJ, Chang, HC, Yang, CL, Leung, YK, Yeo, YC, Jang, SM, Hwang, HY & Diaz, CH 2015, In_0.53Ga_0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate. 於 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers., 7223675, Digest of Technical Papers - Symposium on VLSI Technology, 卷 2015-August, Institute of Electrical and Electronics Engineers Inc., 頁 T204-T205, Symposium on VLSI Technology, VLSI Technology 2015, Kyoto, 日本, 16/06/15. https://doi.org/10.1109/VLSIT.2015.7223675

In_0.53Ga_0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate. / Huang, M. L.; Chang, S. W.; Chen, M. K. 等.
2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2015. p. T204-T205 7223675 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2015-August).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

AU - Huang, M. L.

AU - Chang, S. W.

AU - Chen, M. K.

AU - Fan, C. H.

AU - Lin, H. T.

AU - Lin, C. H.

AU - Chu, R. L.

AU - Lee, K. Y.

AU - Khaderbad, M. A.

AU - Chen, Z. C.

AU - Lin, Chun-Hsiung

AU - Chen, C. H.

AU - Lin, L. T.

AU - Lin, H. J.

AU - Chang, H. C.

AU - Yang, C. L.

AU - Leung, Y. K.

AU - Yeo, Y. C.

AU - Jang, S. M.

AU - Hwang, H. Y.

AU - Diaz, Carlos H.

PY - 2015/8/25

Y1 - 2015/8/25

N2 - In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., Ion/Ioff ∼105, DIBL ∼51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μEF = 1837 cm2/V-s with EOT ∼ 0.9 nm) is among the highest values reported for surface channel In0.53Ga0.47As MOSFETs.

AB - In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., Ion/Ioff ∼105, DIBL ∼51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μEF = 1837 cm2/V-s with EOT ∼ 0.9 nm) is among the highest values reported for surface channel In0.53Ga0.47As MOSFETs.

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U2 - 10.1109/VLSIT.2015.7223675

DO - 10.1109/VLSIT.2015.7223675

M3 - Conference contribution

AN - SCOPUS:84951144173

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - T204-T205

BT - 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Symposium on VLSI Technology, VLSI Technology 2015

Y2 - 16 June 2015 through 18 June 2015

ER -

Huang ML, Chang SW, Chen MK, Fan CH, Lin HT, Lin CH 等. In_0.53Ga_0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate. 於 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2015. p. T204-T205. 7223675. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2015.7223675