In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

L. W. Wu; S. J. Chang; Y. K. Su; R. W. Chuang; Y. P. Hsu; Cheng-Huang Kuo; W. C. Lai; T. C. Wen; J. M. Tsai; J. K. Sheu

doi:10.1016/S0038-1101(03)00247-8

In_0.23Ga_0.77N/GaN MQW LEDs with a low temperature GaN cap layer

L. W. Wu, S. J. Chang^*, Y. K. Su, R. W. Chuang, Y. P. Hsu, Cheng-Huang Kuo, W. C. Lai, T. C. Wen, J. M. Tsai, J. K. Sheu

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照明與能源光電研究所

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摘要

Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In_0.23Ga_0.77N/GaN multiquantum well (MQW) light emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was found that we could enhance the LED output intensity by more than 90% with the low 800 °C-grown p-GaN cap layer, as compared to the conventional high 1000 °C-grown p-GaN cap layer.

原文	English
頁（從 - 到）	2027-2030
頁數	4
期刊	Solid-State Electronics
卷	47
發行號	11
DOIs	https://doi.org/10.1016/S0038-1101(03)00247-8
出版狀態	Published - 1 11月 2003

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10.1016/S0038-1101(03)00247-8

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title = "In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer",

abstract = "Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In0.23Ga0.77N/GaN multiquantum well (MQW) light emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was found that we could enhance the LED output intensity by more than 90% with the low 800 °C-grown p-GaN cap layer, as compared to the conventional high 1000 °C-grown p-GaN cap layer.",

keywords = "Growth temperature, InGaN/GaN, LED, MQW, Roughness",

author = "Wu, {L. W.} and Chang, {S. J.} and Su, {Y. K.} and Chuang, {R. W.} and Hsu, {Y. P.} and Cheng-Huang Kuo and Lai, {W. C.} and Wen, {T. C.} and Tsai, {J. M.} and Sheu, {J. K.}",

year = "2003",

month = nov,

day = "1",

doi = "10.1016/S0038-1101(03)00247-8",

language = "English",

volume = "47",

pages = "2027--2030",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "11",

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TY - JOUR

T1 - In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

AU - Wu, L. W.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Hsu, Y. P.

AU - Kuo, Cheng-Huang

AU - Lai, W. C.

AU - Wen, T. C.

AU - Tsai, J. M.

AU - Sheu, J. K.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In0.23Ga0.77N/GaN multiquantum well (MQW) light emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was found that we could enhance the LED output intensity by more than 90% with the low 800 °C-grown p-GaN cap layer, as compared to the conventional high 1000 °C-grown p-GaN cap layer.

AB - Mg-doped p-GaN epitaxial layers prepared at different temperatures were prepared and characterized. It was found that we could achieve a higher hole concentration and a rough surface by reducing the growth temperature down to 800 °C. In0.23Ga0.77N/GaN multiquantum well (MQW) light emitting diodes (LEDs) with such a low 800 °C-grown p-GaN cap layer were also fabricated. It was found that we could enhance the LED output intensity by more than 90% with the low 800 °C-grown p-GaN cap layer, as compared to the conventional high 1000 °C-grown p-GaN cap layer.

KW - Growth temperature

KW - InGaN/GaN

KW - LED

KW - MQW

KW - Roughness

UR - http://www.scopus.com/inward/record.url?scp=0042730096&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(03)00247-8

DO - 10.1016/S0038-1101(03)00247-8

M3 - Article

AN - SCOPUS:0042730096

SN - 0038-1101

VL - 47

SP - 2027

EP - 2030

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

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In_0.23Ga_0.77N/GaN MQW LEDs with a low temperature GaN cap layer