InSb P-N junction with avalanche breakdown behavior

S. L. Tu, Kai-Feng Huang, S. J. Yang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

High quality InSb p-n junction is formed by Cd diffusion using a two temperature zone technique. The junction has a breakdown voltage of 14.4 V at 77 K, exceeding those of the state of art. I-V characteristics as a function of temperature are carefully studied. The reverse breakdown voltage of the p-n junction increases as the temperature is raised, indicating that the mechanism responsible for the breakdown is an avalanche, rather than a tunneling induced process. RA product of the diode is measured to be 1.2×106 Ω·cm2 at zero bias and remains fairly constant up to a reverse bias of 4 V.

原文English
頁(從 - 到)L1874-L1876
期刊Japanese journal of applied physics
28
發行號11 A
DOIs
出版狀態Published - 11月 1989

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