Innovative fabrication of wafer-level InGaN-based thin-film flip-chip light-emitting diodes

Yen Chih Chiang, Bing Cheng Lin, Kuo Ju Chen, Chien-Chung Lin, Po-Tsung Lee, Hao-Chung Kuo

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

In this letter, an innovative fabrication method for InGaN-based light-emitting diode (LED) was proposed, and the produced optical device was called the wafer-level InGaN-based thin-film flip-chip LEDs (wTFFC-LEDs). Packaging technologies, such as wafer-to-wafer bonding, laser lift-off, textured surface, and interconnection techniques, were applied to complete the device. Through this architecture, the absorption caused by electrodes in traditional vertical injection LEDs (V-LEDs) can be minimized, as well as the light extraction efficiency can be improved. Light-output power of wTFFC-LEDs (350 mA) was increased by 36.5% and 17.2% compared with the V-LEDs and flip-chip LEDs. Furthermore, the external quantum efficiency was also relatively enhanced by 36.3% and 15.5% higher than those of reference devices.

原文English
文章編號7101254
頁(從 - 到)1457-1460
頁數4
期刊IEEE Photonics Technology Letters
27
發行號13
DOIs
出版狀態Published - 1 7月 2015

指紋

深入研究「Innovative fabrication of wafer-level InGaN-based thin-film flip-chip light-emitting diodes」主題。共同形成了獨特的指紋。

引用此