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InN nanopillar devices with strong photoresponse
Lung Hsing Hsu
, Chien Ting Kuo
, Yuh Jen Cheng
, Kuan Chao Chen
,
Hao-Chung Kuo
, Shih Yen Lin
, Chien-Chung Lin
*
*
此作品的通信作者
光電工程學系
光電系統研究所
研究成果
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Conference contribution
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Keyphrases
Epitaxy
100%
High Growth
100%
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Photoresponse
100%
Infrared Absorption
100%
AM1.5G
100%
P-GaN
100%
Indium
100%
Low Pressure
100%
X-ray Diffraction Pattern
100%
Blue Shift
100%
Photoluminescence Measurements
100%
Fermi Level
100%
Simulated Spectra
100%
Photocurrent
100%
Strain Effect
100%
Growth Temperature
100%
Tensile Strain
100%
Nanopillars
100%
Visible Light Absorption
100%
Peak Energy
100%
V(III)
100%
Raman Measurements
100%
IR Response
100%
Photodetector Device
100%
Engineering
Infrared Absorption
100%
X-Ray Diffraction Pattern
100%
Tensile Strain
100%
Metal Organic Chemical Vapor Deposition
100%
Blueshift
100%
Photocurrent
100%
Growth Temperature
100%
Peak Energy
100%
Photodetection
100%
Strain Effect
100%
Nanopillar
100%
Fermi Level
100%
Material Science
X-Ray Diffraction
100%
Indium
100%
Diffraction Pattern
100%
Photoluminescence
100%
Tensile Strain
100%
Epitaxy
100%
Metal-Organic Chemical Vapor Deposition
100%