@inproceedings{1134b9f7617b4eefb56e64ab2e842188,
title = "Initial-on BSD protection design with PMO S-triggered SCR device",
abstract = "A novel SCR design with {"}initial-on{"} function is proposed to achieve the lowest trigger voltage and the fastest turn-on speed of SCR device for effective on-chip ESD protection. Without using the special native device or any process modification, this initial-on design is implemented by PMOS-triggered SCR device, which can be realized in general CMOS processes. This initial-on SCR design also presents a high enough holding voltage to avoid latchup issue. The new proposed initial-on ESD protection design with PMOS-triggered SCR device has been successfully verified in a 0.25-μm CMOS process.",
author = "Ker, {Ming Dou} and Chen, {Shih Hung}",
year = "2005",
month = jan,
day = "1",
doi = "10.1109/ASSCC.2005.251818",
language = "English",
isbn = "0780391624",
series = "2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005",
publisher = "IEEE Computer Society",
pages = "105--108",
booktitle = "2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005",
address = "United States",
note = "1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005 ; Conference date: 01-11-2005 Through 03-11-2005",
}