InGaN/GaN tunnel-injection blue light-emitting diodes

T. C. Wen; S. J. Chang; L. W. Wu; Y. K. Su; W. C. Lai; Cheng-Huang Kuo; C. H. Chen; J. K. Sheu; J. F. Chen

doi:10.1109/TED.2002.1003762

InGaN/GaN tunnel-injection blue light-emitting diodes

T. C. Wen^*, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai, Cheng-Huang Kuo, C. H. Chen, J. K. Sheu, J. F. Chen

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

58 引文斯高帕斯（Scopus）

摘要

A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In_0.18Ga_0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.

原文	English
頁（從 - 到）	1093-1095
頁數	3
期刊	IEEE Transactions on Electron Devices
卷	49
發行號	6
DOIs	https://doi.org/10.1109/TED.2002.1003762
出版狀態	Published - 6月 2002

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10.1109/TED.2002.1003762

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@article{15e67ea65df549619b32c7f21b362aaf,

title = "InGaN/GaN tunnel-injection blue light-emitting diodes",

abstract = "A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.",

keywords = "Charge asymmetric resonance tunneling (CART), InGaN/GaN, Light-emitting diode (LED), MOCVD, Multiquantum well (MQW)",

author = "Wen, {T. C.} and Chang, {S. J.} and Wu, {L. W.} and Su, {Y. K.} and Lai, {W. C.} and Cheng-Huang Kuo and Chen, {C. H.} and Sheu, {J. K.} and Chen, {J. F.}",

year = "2002",

month = jun,

doi = "10.1109/TED.2002.1003762",

language = "English",

volume = "49",

pages = "1093--1095",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - InGaN/GaN tunnel-injection blue light-emitting diodes

AU - Wen, T. C.

AU - Chang, S. J.

AU - Wu, L. W.

AU - Su, Y. K.

AU - Lai, W. C.

AU - Kuo, Cheng-Huang

AU - Chen, C. H.

AU - Sheu, J. K.

AU - Chen, J. F.

PY - 2002/6

Y1 - 2002/6

N2 - A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.

AB - A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.

KW - Charge asymmetric resonance tunneling (CART)

KW - InGaN/GaN

KW - Light-emitting diode (LED)

KW - MOCVD

KW - Multiquantum well (MQW)

UR - http://www.scopus.com/inward/record.url?scp=0036609957&partnerID=8YFLogxK

U2 - 10.1109/TED.2002.1003762

DO - 10.1109/TED.2002.1003762

M3 - Article

AN - SCOPUS:0036609957

SN - 0018-9383

VL - 49

SP - 1093

EP - 1095

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

InGaN/GaN tunnel-injection blue light-emitting diodes

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