InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

Y. P. Hsu; S. J. Chang; Y. K. Su; C. S. Chang; S. C. Shei; Y. C. Lin; Cheng-Huang Kuo; L. W. Wu; S. C. Chen

doi:10.1007/s11664-003-0166-3

InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

Y. P. Hsu^*, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei, Y. C. Lin, Cheng-Huang Kuo, L. W. Wu, S. C. Chen

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

21 引文斯高帕斯（Scopus）

摘要

Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO₂/TiO₂ distributed-Bragg reflector (DBR) structure could reflect more downward-emitting photons than an Al-mirror layer. It was also found that the 20-mA output power was 2.76 mW, 2.65 mW, and 2.45 mW for the DBR LED, Al-reflector LED, and conventional LED, respectively. With the same 50-mA current injection, the integrated-electroluminescence (EL) intensity of a DBR LED and an Al-reflector LED was 19% and 15% larger than that observed from a conventional LED.

原文	English
頁（從 - 到）	403-406
頁數	4
期刊	Journal of Electronic Materials
卷	32
發行號	5
DOIs	https://doi.org/10.1007/s11664-003-0166-3
出版狀態	Published - 1 1月 2003

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10.1007/s11664-003-0166-3

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title = "InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates",

abstract = "Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO2/TiO2 distributed-Bragg reflector (DBR) structure could reflect more downward-emitting photons than an Al-mirror layer. It was also found that the 20-mA output power was 2.76 mW, 2.65 mW, and 2.45 mW for the DBR LED, Al-reflector LED, and conventional LED, respectively. With the same 50-mA current injection, the integrated-electroluminescence (EL) intensity of a DBR LED and an Al-reflector LED was 19% and 15% larger than that observed from a conventional LED.",

keywords = "DBR, InGaN/GaN, LED, Metal reflector",

author = "Hsu, {Y. P.} and Chang, {S. J.} and Su, {Y. K.} and Chang, {C. S.} and Shei, {S. C.} and Lin, {Y. C.} and Cheng-Huang Kuo and Wu, {L. W.} and Chen, {S. C.}",

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doi = "10.1007/s11664-003-0166-3",

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TY - JOUR

T1 - InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

AU - Hsu, Y. P.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chang, C. S.

AU - Shei, S. C.

AU - Lin, Y. C.

AU - Kuo, Cheng-Huang

AU - Wu, L. W.

AU - Chen, S. C.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO2/TiO2 distributed-Bragg reflector (DBR) structure could reflect more downward-emitting photons than an Al-mirror layer. It was also found that the 20-mA output power was 2.76 mW, 2.65 mW, and 2.45 mW for the DBR LED, Al-reflector LED, and conventional LED, respectively. With the same 50-mA current injection, the integrated-electroluminescence (EL) intensity of a DBR LED and an Al-reflector LED was 19% and 15% larger than that observed from a conventional LED.

AB - Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO2/TiO2 distributed-Bragg reflector (DBR) structure could reflect more downward-emitting photons than an Al-mirror layer. It was also found that the 20-mA output power was 2.76 mW, 2.65 mW, and 2.45 mW for the DBR LED, Al-reflector LED, and conventional LED, respectively. With the same 50-mA current injection, the integrated-electroluminescence (EL) intensity of a DBR LED and an Al-reflector LED was 19% and 15% larger than that observed from a conventional LED.

KW - DBR

KW - InGaN/GaN

KW - LED

KW - Metal reflector

UR - http://www.scopus.com/inward/record.url?scp=0038664230&partnerID=8YFLogxK

U2 - 10.1007/s11664-003-0166-3

DO - 10.1007/s11664-003-0166-3

M3 - Article

AN - SCOPUS:0038664230

SN - 0361-5235

VL - 32

SP - 403

EP - 406

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

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