摘要
Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.
原文 | English |
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頁(從 - 到) | 240-242 |
頁數 | 3 |
期刊 | Ieee Electron Device Letters |
卷 | 23 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 5月 2002 |