InGaN/GaN light emitting diodes activated in O2 ambient

Cheng-Huang Kuo; S. J. Chang; Y. K. Su; J. F. Chen; L. W. Wu; J. K. Sheu; C. H. Chen; G. C. Chi

doi:10.1109/55.998863

InGaN/GaN light emitting diodes activated in O₂ ambient

Cheng-Huang Kuo^*, S. J. Chang, Y. K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H. Chen, G. C. Chi

^*此作品的通信作者

照明與能源光電研究所

研究成果: Letter › 同行評審

55 引文斯高帕斯（Scopus）

摘要

Mg-doped GaN epitaxial layers were annealed in pure O₂ and pure N₂. It was found that we could achieve a low-resistive p-type GaN by pure O₂ annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O₂ were both smaller than those values observed from InGaN/GaN LED annealed in pure N₂. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

原文	English
頁（從 - 到）	240-242
頁數	3
期刊	IEEE Electron Device Letters
卷	23
發行號	5
DOIs	https://doi.org/10.1109/55.998863
出版狀態	Published - 1 5月 2002

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10.1109/55.998863

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title = "InGaN/GaN light emitting diodes activated in O2 ambient",

abstract = "Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.",

keywords = "InGaN/GaN, LED, Mg activation, Oxygen annealing",

author = "Cheng-Huang Kuo and Chang, {S. J.} and Su, {Y. K.} and Chen, {J. F.} and Wu, {L. W.} and Sheu, {J. K.} and Chen, {C. H.} and Chi, {G. C.}",

year = "2002",

month = may,

day = "1",

doi = "10.1109/55.998863",

language = "English",

volume = "23",

pages = "240--242",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

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TY - JOUR

T1 - InGaN/GaN light emitting diodes activated in O2 ambient

AU - Kuo, Cheng-Huang

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chen, J. F.

AU - Wu, L. W.

AU - Sheu, J. K.

AU - Chen, C. H.

AU - Chi, G. C.

PY - 2002/5/1

Y1 - 2002/5/1

N2 - Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

AB - Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

KW - InGaN/GaN

KW - LED

KW - Mg activation

KW - Oxygen annealing

UR - http://www.scopus.com/inward/record.url?scp=0036575575&partnerID=8YFLogxK

U2 - 10.1109/55.998863

DO - 10.1109/55.998863

M3 - Letter

AN - SCOPUS:0036575575

SN - 0741-3106

VL - 23

SP - 240

EP - 242

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

InGaN/GaN light emitting diodes activated in O2 ambient

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InGaN/GaN light emitting diodes activated in O₂ ambient