InGaN/GaN light emitting diodes activated in O2 ambient

Cheng-Huang Kuo*, S. J. Chang, Y. K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H. Chen, G. C. Chi

*此作品的通信作者

研究成果: Letter同行評審

55 引文 斯高帕斯(Scopus)

摘要

Mg-doped GaN epitaxial layers were annealed in pure O2 and pure N2. It was found that we could achieve a low-resistive p-type GaN by pure O2 annealing at a temperature as low as 400°C. With a 500°C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O2 were both smaller than those values observed from InGaN/GaN LED annealed in pure N2. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

原文English
頁(從 - 到)240-242
頁數3
期刊Ieee Electron Device Letters
23
發行號5
DOIs
出版狀態Published - 5月 2002

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