InGaN-GaN MQW LEDs with Si treatment

Y. P. Hsu*, S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, Cheng-Huang Kuo, C. S. Chang

*此作品的通信作者

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

原文English
頁(從 - 到)1620-1622
頁數3
期刊IEEE Photonics Technology Letters
17
發行號8
DOIs
出版狀態Published - 1 8月 2005

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