InGaN-GaN MQW LEDs with Si treatment

Y. P. Hsu; S. J. Chang; Y. K. Su; S. C. Chen; J. M. Tsai; W. C. Lai; Cheng-Huang Kuo; C. S. Chang

doi:10.1109/LPT.2005.851989

InGaN-GaN MQW LEDs with Si treatment

Y. P. Hsu^*, S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, Cheng-Huang Kuo, C. S. Chang

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

30 引文斯高帕斯（Scopus）

摘要

Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Si_x N_y layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

原文	English
頁（從 - 到）	1620-1622
頁數	3
期刊	IEEE Photonics Technology Letters
卷	17
發行號	8
DOIs	https://doi.org/10.1109/LPT.2005.851989
出版狀態	Published - 8月 2005

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@article{0799111f3ca94469b8adf9871448afd7,

title = "InGaN-GaN MQW LEDs with Si treatment",

abstract = "Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.",

keywords = "InGaN-GaN, Light-emitting diode (LED), Multi-quantum well (MQW), Si treatment, Surface roughness",

author = "Hsu, {Y. P.} and Chang, {S. J.} and Su, {Y. K.} and Chen, {S. C.} and Tsai, {J. M.} and Lai, {W. C.} and Cheng-Huang Kuo and Chang, {C. S.}",

year = "2005",

month = aug,

doi = "10.1109/LPT.2005.851989",

language = "English",

volume = "17",

pages = "1620--1622",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - InGaN-GaN MQW LEDs with Si treatment

AU - Hsu, Y. P.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chen, S. C.

AU - Tsai, J. M.

AU - Lai, W. C.

AU - Kuo, Cheng-Huang

AU - Chang, C. S.

PY - 2005/8

Y1 - 2005/8

N2 - Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

AB - Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force microscope and scanning electron microscope. It was found that Si treatment resulted in a much rougher sample surface due to the formation of a thin Six Ny layer. It was also found that forward voltage of the Si-treated InGaN-GaN light-emitting diode (LED) was slightly higher than that of conventional LED without Si treatment. However, it was also found that such Si treatment could also result in a much larger LED output intensity.

KW - InGaN-GaN

KW - Light-emitting diode (LED)

KW - Multi-quantum well (MQW)

KW - Si treatment

KW - Surface roughness

UR - http://www.scopus.com/inward/record.url?scp=23844538076&partnerID=8YFLogxK

U2 - 10.1109/LPT.2005.851989

DO - 10.1109/LPT.2005.851989

M3 - Article

AN - SCOPUS:23844538076

SN - 1041-1135

VL - 17

SP - 1620

EP - 1622

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 8

ER -

InGaN-GaN MQW LEDs with Si treatment

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