InGaN-GaN light emitting diodes grown by molecular beam epitaxy

Chin An Chang*, E. Tsou Wu, Fung Jei Lai, Chia-Ming Tsai, Ming Cheng Hong, Cheng Ru Wu, Ching Kuo Ho, Huei Fen Liu, Shih Wei Feng, Chi Chih Liao, Chi Chung Yang

*此作品的通信作者

研究成果: Article同行評審

摘要

Light emitting diodes consisting GaN homojunctions, InGaN-GaN double heterostructures (DH), and InGaN-GaN multiple quantum wells (MQW) were grown by molecular beam epitaxy (MBE). Using a plasma nitrogen source and solid sources for Ga, In and dopants, all structures contain an 1 μm n-GaN (doped with Si to mid 10 18 cm -3 ) and 0.5 μm p-GaN (doped with Mg to low 10 17 cm -3 ). In addition, the DH structures contain an active layer of InGaN with 13% In, and the MQW structures contain an active region of 10 periods of InGaN-GaN quantum wells. Blue electroluminescence is observed for both homojunction and DH structures, whereas white emission is observed for the MQW structures. The minimal injection current needed for emission is the lowest for MQW and highest for the homojunction structures. Possible phase separation of InGaN in the MQW structures is a suggested reason for the observed white emission.

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