InGaN-based Micro-LEDs: Enhancing Efficiency and Speed for Next-Generation Visible Light Communication Applications

Wei Ta Huang, Tzu Yi Lee, Fu He Hsiao, Wen Chien Miao, Daisuke Iida, Kuo Bin Hong, Chien Chung Lin, Fang Chung Chen, Shu Wei Chang, Ray Hua Horng, Yu Heng Hong, Yao Wei Huang, Kazuhiro Ohkawa, Hao Chung Kuo*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Visible light communication (VLC), which utilizes LEDs, promises superior privacy and security and reduced impact on surrounding electronics compared to traditional Wi-Fi. This paper explores the potential of InGaN-based micro-light-emitting diodes (micro-LEDs) in high-speed VLC applications, focusing on yellow-green micro-LEDs with nanoporous distributed Bragg reflector (NP-DBR) and red InGaN micro-LEDs. Yellow-green micro-LEDs achieved a maximum external quantum efficiency (EQE) of 8.7%, bandwidth of 442 MHz, and data rate of 800 Mbit/s, while red micro-LEDs demonstrated an EQE of 5.95%, maximum bandwidth of 424 MHz, and data rate of 800 Mbit/s. The application of four core technologies, including circular devices and electrodes, reduced contact electrode area, atomic layer deposition (ALD) for passivation protection, and multi-chip parallel arrays, enhanced optoelectronic characteristics. This paper also highlights the superior performance of InGaN-based red micro-LEDs with a single quantum well (SQW) structure over double quantum wells (DQWs) for VLC applications. The SQW structure yielded higher maximum EQE, modulation bandwidth, and faster transmission rates, paving the way for the potential of full-color micro-display and high-speed VLC applications.

原文English
主出版物標題Gallium Nitride Materials and Devices XIX
編輯Hiroshi Fujioka, Hadis Morkoc, Ulrich T. Schwarz
發行者SPIE
ISBN(電子)9781510670327
DOIs
出版狀態Published - 2024
事件Gallium Nitride Materials and Devices XIX 2024 - San Francisco, 美國
持續時間: 29 1月 20241 2月 2024

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
12886
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices XIX 2024
國家/地區美國
城市San Francisco
期間29/01/241/02/24

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