InGaN-based light-emitting diode with undercut side wall

Chih Chiang Kao; J. T. Chu; H. W. Huang; Y. C. Peng; C. C. Yu; Y. L. Hseih; C. F. Lin; Hao-Chung Kuo; S. C. Wang

doi:10.1109/LEOS.2004.1363223

InGaN-based light-emitting diode with undercut side wall

Chih Chiang Kao^*
, J. T. Chu
, H. W. Huang
, Y. C. Peng
, C. C. Yu
, Y. L. Hseih
, C. F. Lin
, Hao-Chung Kuo
, S. C. Wang

^*此作品的通信作者

光電工程學系

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Indium gallium nitride (InGaN)-based light emitted diodes (LED) with ∼ 22° undercut side walls were fabricated by controllable inductively coupled plasma reactive ion-etching (ICP-RIE). The structure of the LEDs consisted 30-nm-thick low temperature GaN nucleation layer, and an undoped 5 period InGaN-GaN multiple quantum well (MQW) active region with emission at ∼470 nm at 20 mA operation. Current-voltage characteristics of these diodes were also measured. It was observed that with a 20-mA current injection, the output powers of the LED with ∼ 22° undercut side walls and normal LEd were about 5 and 3 mW respectively.

原文	English
頁（從 - 到）	286-287
頁數	2
期刊	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
卷	1
DOIs	https://doi.org/10.1109/LEOS.2004.1363223
出版狀態	Published - 2004
事件	2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, 波多黎各持續時間: 7 11月 2004 → 11 11月 2004

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10.1109/LEOS.2004.1363223

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@article{45fa61f3162b442c8c455e1053876bc6,

title = "InGaN-based light-emitting diode with undercut side wall",

abstract = "Indium gallium nitride (InGaN)-based light emitted diodes (LED) with ∼ 22° undercut side walls were fabricated by controllable inductively coupled plasma reactive ion-etching (ICP-RIE). The structure of the LEDs consisted 30-nm-thick low temperature GaN nucleation layer, and an undoped 5 period InGaN-GaN multiple quantum well (MQW) active region with emission at ∼470 nm at 20 mA operation. Current-voltage characteristics of these diodes were also measured. It was observed that with a 20-mA current injection, the output powers of the LED with ∼ 22° undercut side walls and normal LEd were about 5 and 3 mW respectively.",

author = "Kao, \{Chih Chiang\} and Chu, \{J. T.\} and Huang, \{H. W.\} and Peng, \{Y. C.\} and Yu, \{C. C.\} and Hseih, \{Y. L.\} and Lin, \{C. F.\} and Hao-Chung Kuo and Wang, \{S. C.\}",

year = "2004",

doi = "10.1109/LEOS.2004.1363223",

language = "English",

volume = "1",

pages = "286--287",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 ; Conference date: 07-11-2004 Through 11-11-2004",

}

TY - JOUR

T1 - InGaN-based light-emitting diode with undercut side wall

AU - Kao, Chih Chiang

AU - Chu, J. T.

AU - Huang, H. W.

AU - Peng, Y. C.

AU - Yu, C. C.

AU - Hseih, Y. L.

AU - Lin, C. F.

AU - Kuo, Hao-Chung

AU - Wang, S. C.

PY - 2004

Y1 - 2004

N2 - Indium gallium nitride (InGaN)-based light emitted diodes (LED) with ∼ 22° undercut side walls were fabricated by controllable inductively coupled plasma reactive ion-etching (ICP-RIE). The structure of the LEDs consisted 30-nm-thick low temperature GaN nucleation layer, and an undoped 5 period InGaN-GaN multiple quantum well (MQW) active region with emission at ∼470 nm at 20 mA operation. Current-voltage characteristics of these diodes were also measured. It was observed that with a 20-mA current injection, the output powers of the LED with ∼ 22° undercut side walls and normal LEd were about 5 and 3 mW respectively.

AB - Indium gallium nitride (InGaN)-based light emitted diodes (LED) with ∼ 22° undercut side walls were fabricated by controllable inductively coupled plasma reactive ion-etching (ICP-RIE). The structure of the LEDs consisted 30-nm-thick low temperature GaN nucleation layer, and an undoped 5 period InGaN-GaN multiple quantum well (MQW) active region with emission at ∼470 nm at 20 mA operation. Current-voltage characteristics of these diodes were also measured. It was observed that with a 20-mA current injection, the output powers of the LED with ∼ 22° undercut side walls and normal LEd were about 5 and 3 mW respectively.

UR - https://www.scopus.com/pages/publications/14244251461

U2 - 10.1109/LEOS.2004.1363223

DO - 10.1109/LEOS.2004.1363223

M3 - Conference article

AN - SCOPUS:14244251461

SN - 1092-8081

VL - 1

SP - 286

EP - 287

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004

Y2 - 7 November 2004 through 11 November 2004

ER -

InGaN-based light-emitting diode with undercut side wall

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