InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers

A. Li; S. C. Liu; Kuan-Wei Su; Y. L. Liao; S. C. Huang; Yung-Fu Chen; Kai-Feng Huang

doi:10.1007/s00340-006-2247-5

InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers

A. Li, S. C. Liu, Kuan-Wei Su, Y. L. Liao, S. C. Huang, Yung-Fu Chen^*, Kai-Feng Huang

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電子物理學系

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12 引文斯高帕斯（Scopus）

摘要

We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8W, an average output power of 160mW with a Q-switched pulse width of 19ns at a pulse repetition rate of 38kHz was obtained.

原文	English
頁（從 - 到）	429-431
頁數	3
期刊	Applied Physics B: Lasers and Optics
卷	84
發行號	3
DOIs	https://doi.org/10.1007/s00340-006-2247-5
出版狀態	Published - 1 9月 2006

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10.1007/s00340-006-2247-5

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abstract = "We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8W, an average output power of 160mW with a Q-switched pulse width of 19ns at a pulse repetition rate of 38kHz was obtained.",

author = "A. Li and Liu, {S. C.} and Kuan-Wei Su and Liao, {Y. L.} and Huang, {S. C.} and Yung-Fu Chen and Kai-Feng Huang",

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AU - Li, A.

AU - Liu, S. C.

AU - Su, Kuan-Wei

AU - Liao, Y. L.

AU - Huang, S. C.

AU - Chen, Yung-Fu

AU - Huang, Kai-Feng

PY - 2006/9/1

Y1 - 2006/9/1

N2 - We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8W, an average output power of 160mW with a Q-switched pulse width of 19ns at a pulse repetition rate of 38kHz was obtained.

AB - We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06μm. With an incident pump power of 1.8W, an average output power of 160mW with a Q-switched pulse width of 19ns at a pulse repetition rate of 38kHz was obtained.

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U2 - 10.1007/s00340-006-2247-5

DO - 10.1007/s00340-006-2247-5

M3 - Article

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SN - 0946-2171

VL - 84

SP - 429

EP - 431

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

IS - 3

ER -

InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers

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